US Patent Issued to SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES on Oct. 21 for "Gallium oxide semiconductor structure, vertical gallium oxide-based power device, and preparation method" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,119, issued on Oct. 21, was assigned to SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES (Shanghai).

"Gallium oxide semiconductor structure, vertical gallium oxide-based power device, and preparation method" was invented by Xin Ou (Shanghai), Wenhui Xu (Shanghai), Tiangui You (Shanghai) and Zhenghao Shen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a gallium oxide semiconductor structure, a vertical gallium oxide-based power device, and a preparation method. An unintentionally doped gallium oxide layer (110) is transferred to a highly doped and highly thermally cond...