US Patent Issued to SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES on May 27 for "Cryogenic memory cell and memory device" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,543, issued on May 27, was assigned to SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES (Shanghai).

"Cryogenic memory cell and memory device" was invented by Lei Chen (Shanghai), Junwen Zeng (Shanghai) and Zhen Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A cryogenic memory cell and a memory device are provided. The cryogenic memory cell includes a spin moment transfer device. The spin moment transfer device converts a write current into a spin polarization current and changes a magnetic polarization direction under the action of the spin polarization current to achieve write storage of 0 and...