US Patent Issued to SHANGHAI INSTITUTE OF IC MATERIALS on July 15 for "Need for Si3N4 selective removal by wet chemistry" (Connecticut Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,193, issued on July 15, was assigned to SHANGHAI INSTITUTE OF IC MATERIALS (Shanghai).

"Need for Si3N4 selective removal by wet chemistry" was invented by Weimin Li (New Milford, Conn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system for processing a substrate and a method for processing a substrate are disclosed. The system for processing a substrate includes a processing chamber configured to receive the substrate, wherein the substrate is exposed to an etchant in the processing chamber to remove a portion of the substrate and generate access to the substrate. A by-product in the etching solution; and a by-product removing section configure...