US Patent Issued to SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES on Nov. 11 for "Batch sintering method for high-property silicon nitride ceramic substrate" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,466,772, issued on Nov. 11, was assigned to SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES (Shanghai).

"Batch sintering method for high-property silicon nitride ceramic substrate" was invented by Hui Zhang (Shanghai), Xuejian Liu (Shanghai), Jindi Jiang (Shanghai), Xiumin Yao (Shanghai), Zhengren Huang (Shanghai), Zhongming Chen (Shanghai) and Jian Huang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a batch sintering method for a high-property silicon nitride ceramic substrate. The batch sintering method includes: (1) silicon nitride ceramic substrate green bodies are stacked and put into a boron...