US Patent Issued to SHANGHAI IC R&D CENTER on Sept. 23 for "Infrared detector having vertical sidewall sensitive layer and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,389, issued on Sept. 23, was assigned to SHANGHAI IC R&D CENTER Co. LTD. (Shanghai).

"Infrared detector having vertical sidewall sensitive layer and manufacturing method thereof" was invented by Xiaoxu Kang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provided an infrared detector having a vertical sidewall sensitive layer and a manufacturing method thereof. By forming at least one fin structure on a semiconductor substrate; and a sensitive layer can be formed on the sidewall of the fin structure by ion implantation. The vertical sidewall sensitive layer is configured to reduce the impact of lithography on the sen...