US Patent Issued to SHANGHAI IC R&D CENTER on Oct. 14 for "Phase change memory unit and preparation method therefor" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,478, issued on Oct. 14, was assigned to SHANGHAI IC R&D CENTER Co. LTD. (Shanghai).

"Phase change memory unit and preparation method therefor" was invented by Min Zhong (Shanghai) and Gaoming Feng (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is to provide a phase change memory unit and preparation method thereof. The phase change memory comprises a bottom electrode, a phase change cell, a heating electrode and a top electrode on a substrate from bottom to top. The phase change cell is a column vertically connected to the bottom electrode, which sequentially comprise a columnar phase change material layer, a hollow c...