US Patent Issued to SHANGHAI IC R&D CENTER on April 29 for "Critical dimension error analysis method" (Chinese, Null Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,725, issued on April 29, was assigned to SHANGHAI IC R&D CENTER Co. LTD. (Shanghai).

"Critical dimension error analysis method" was invented by Xueru Yu (Shanghai), Hongxia Sun (Shanghai), Chen Li (Shanghai), Pengfei Wang (Shanghai), Jiebin Duan (Shanghai), Xiucui Wang (Shanghai), Hao Fu (Shanghai), Tao Zhou (Shanghai), Yan Yan (Shanghai), Bowen Xu (Shanghai, St. Helena), Lingyi Guo (Shanghai) and Liren Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention disclosures a critical dimension error analysis method, comprising: S01: performing lithography processes on a wafer, measuring the critical dimension (CD) values of the...