US Patent Issued to SHANGHAI IC R&D CENTER, Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center on Oct. 14 for "CMOS imaging sensor structure and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,336, issued on Oct. 14, was assigned to SHANGHAI IC R&D CENTER Co. LTD. (Shanghai) and Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co. Ltd (Shanghai).

"CMOS imaging sensor structure and manufacturing method therefor" was invented by Xiaoxu Kang (Shanghai) and Ming Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A CMOS imaging sensor structure and a manufacturing method therefor. The CMOS imaging sensor structure comprises a pixel unit of the CMOS imaging sensor set on a semiconductor substrate, the pixel unit comprises a circuit device region and a first photosensitive region, the circuit device region is...