ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,170, issued on Aug. 19, was assigned to Shanghai Huali Microelectronics Corp. (Shanghai).
"Super flash and method for manufacturing same" was invented by Jiacheng Wen (Shanghai), Zhi Tian (Shanghai) and Feng Ji (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a cell structure of a super flash comprising: a word line gate, a floating gate, a control gate, and an erase gate. The floating gate comprises a first TiN layer located on a side face of the control gate and a second polysilicon layer formed at the top of the first TiN layer. The second polysilicon layer is in electric contact with the first TiN layer....