US Patent Issued to Shanghai Huali Integrated Circuit on Sept. 30 for "Method for manufacturing high-voltage metal gate device" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,357, issued on Sept. 30, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for manufacturing high-voltage metal gate device" was invented by Xiaoliang Tang (Shanghai), Haoyu Chen (Shanghai) and Hua Shao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for manufacturing a high-voltage metal gate device. After the deposition of a gate metal through a normal process, in CMP processes performed to the gate metal, firstly a first CMP process is performed to thin the gate metal to a certain thickness in advance, then a blocking dielectric layer is deposited, a large-area high-vo...