US Patent Issued to Shanghai Huali Integrated Circuit on Sept. 23 for "Process method for improving reliability of metal gate high-voltage device" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,436, issued on Sept. 23, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Process method for improving reliability of metal gate high-voltage device" was invented by Yaoyu Zhan (Shanghai), Qiwei Wang (Shanghai) and Zhigang Zhang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a process method for improving reliability of a metal gate high-voltage device. Stacks layers formed over the gate oxide layer and spaced apart from each other. An SiCN layer is deposited to cover tops and sidewalls of the stack layers, and cover bottoms of slots between the stack layers. An HARP layer is deposited ...