US Patent Issued to Shanghai Huali Integrated Circuit on Sept. 23 for "Method for reducing contact resistance" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,451, issued on Sept. 23, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for reducing contact resistance" was invented by Wensheng Xu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method for reducing contact resistance. The contact holes of a gate structure comprising: metal gates, a source and drain structure located between the metal gates, a recess formed by using the outer side wall of the metal gates as a side wall and the upper surface of the source and drain structure as a bottom; a silicon nitride layer provided at the bottom of the recess; an oxide provided within th...