US Patent Issued to Shanghai Huali Integrated Circuit on Sept. 16 for "Method for increasing bridging process window of contact hole and gate of device" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,907, issued on Sept. 16, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for increasing bridging process window of contact hole and gate of device" was invented by Yenxia Hao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method for increasing the process window to avoid bridging between the device's contact hole and gate, including: placing a semiconductor structure containing a gate structure in a reaction cavity, wherein reaction gases fed sequentially into the reaction cavity include the first reaction gas containing Si and Cl, a second reaction gas containing C and a thir...