US Patent Issued to Shanghai Huali Integrated Circuit on Oct. 21 for "HV device and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,120, issued on Oct. 21, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"HV device and method for manufacturing same" was invented by Zhi Tian (Shanghai), Hua Shao (Shanghai) and Haoyu Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses an HV device, comprising: a gate dielectric layer formed in a first trench, a gate conductive material layer formed on the surface of the gate dielectric layer, and a second dielectric layer filling a second trench formed between a second side face of a drain shallow trench isolation and a first side face of the first trench. The depths of the first tren...