ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,297, issued on Oct. 14, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).
"Low voltage triggering silicon controlled rectifier" was invented by Zhi Tian (Shanghai), Tao Liu (Shanghai) and Feng Ji (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a low voltage triggering silicon controlled rectifier which includes: an N well and a P well forming a PN junction, a first P+ region formed in the N well and connected to an anode, and a first N+ region formed in the P well and connected to a cathode. A second P+ region is formed in the N well at the PN junction and diffuses into the P well. A secon...