ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,216, issued on Nov. 25, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).
"Method for manufacturing a super flash memory" was invented by Qichao Liang (Shanghai), Zhi Tian (Shanghai) and Feng Ji (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for manufacturing a semiconductor device, which includes the following steps: step 1: forming first gate structures on a semiconductor substrate; step 2: performing a first etching process to etch the semiconductor substrate on at least one side of each first gate structure to a certain depth and form a first groove; step 3: performing a stre...