US Patent Issued to Shanghai Huali Integrated Circuit on May 20 for "Method for manufacturing isolation structure of hybrid epitaxial area and active area in FDSOI" (Chinese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,281, issued on May 20, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for manufacturing isolation structure of hybrid epitaxial area and active area in FDSOI" was invented by Yongyue Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for manufacturing an isolation structure of a hybrid epitaxial area and an active area in an FDSOI, comprising: step 1, providing an FDSOI substrate structure and forming a hard mask layer; step 2, removing the hard mask layer and a semiconductor top layer in the hybrid epitaxial area, so as to form a top trench; step 3, performing latera...