US Patent Issued to Shanghai Huali Integrated Circuit on May 20 for "Epitaxial growth method for FDSOI hybrid region" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,232, issued on May 20, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Epitaxial growth method for FDSOI hybrid region" was invented by Jiaqi Hong (Shanghai), Qiang Yan (Shanghai) and Jun Tan (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses an epitaxial growth method for an FDSOI hybrid region, comprising: step 1, providing an FDSOI substrate structure; step 2, forming a trench; step 3, performing first isotropic epitaxial growth, wherein a top surface of a first semiconductor epitaxial sublayer is located in a plane between a top surface and a bottom surface of a dielectric buried layer...