US Patent Issued to Shanghai Huali Integrated Circuit on March 25 for "Testability circuit and read and write path decoupling circuit of SRAM" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,924, issued on March 25, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Testability circuit and read and write path decoupling circuit of SRAM" was invented by Zhenan Lai (Shanghai) and Junsheng Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a design for testability circuit of an SRAM. In a write path circuit detection mode of a fault diagnosis logic control module, a write path circuit is in an on state, a write data bit multiplexer is in a selected state, a read data bit multiplexer is in a deselected state, a read path circuit is in an on state, and a memory cell is in a sele...