US Patent Issued to Shanghai Huali Integrated Circuit on June 24 for "Method of failure analysis for defect locations" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,339,202, issued on June 24, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method of failure analysis for defect locations" was invented by Qiang Chen (Shanghai) and Jinde Gao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of failure analysis for locating open circuit defect in a metal layers, comprising: providing a chip sample having a metal layer, with an open circuit defect; delaminating the chip to expose the metal layer; depositing a metal conductive layer on the metal layer; removing a portion of the metal conductive layer to expose the metal layer; depositing a non-conductive protective layer to cover the...