US Patent Issued to Shanghai Huali Integrated Circuit on July 29 for "Method for manufacturing shallow trench isolation" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,580, issued on July 29, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for manufacturing shallow trench isolation" was invented by Jin Xu (Shanghai), Minjie Chen (Shanghai), Zaifeng Tang (Shanghai) and Yu Ren (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for manufacturing shallow trench isolation, comprising: step 1: performing first time etching on a semiconductor substrate by means of a dry etching process to form the shallow trench, wherein in the first time etching, metal ions are released from a dry etching process chamber and deposited on the inner surface of th...