US Patent Issued to Shanghai Huali Integrated Circuit on July 29 for "Method for making silicon epitaxy of a FDSOI device" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,582, issued on July 29, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for making silicon epitaxy of a FDSOI device" was invented by Lian Lu (Shanghai), Quanbo Li (Shanghai) and Jun Huang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application relates to a method for making silicon epitaxy of a FDSOI device, which includes the following steps: providing a semiconductor structure; sequentially forming a first etch stop layer and an etch reaction layer on a surface of the semiconductor structure; performing an etching operation to the etch reaction layer to form a sidewall structure respectively; f...