US Patent Issued to Shanghai Huali Integrated Circuit on July 29 for "Method for making semi-floating gate transistor with three-gate structure" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,368, issued on July 29, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for making semi-floating gate transistor with three-gate structure" was invented by Zhigang Yang (Shanghai), Heng Liu (Shanghai), Xiaoying Meng (Shanghai), Jianghua Leng (Shanghai) and Tianpeng Guan (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for making a semi-floating gate transistor with a three-gate structure is disclosed, comprising: forming a first trench structure in isolated active regions and a first polysilicon layer, removing part of the first polysilicon layer; forming a second gate oxide layer and a second polysilicon...