US Patent Issued to Shanghai Huali Integrated Circuit on Jan. 27 for "Method for improving plasma distribution in etching" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,724, issued on Jan. 27, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for improving plasma distribution in etching" was invented by Wentao Fu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method for improving plasma distribution in etching, the RF coil is a circular coil composed of four arcs, and the four arcs are sequentially defined as first to fourth arcs; providing a cross support, wherein heads and tails of the first to fourth arcs are separately connected to the cross support; respectively applying different currents to the first to fourth arcs, which are sequentially...