US Patent Issued to Shanghai Huali Integrated Circuit on Jan. 20 for "Method for manufacturing gate of NAND flash" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,525, issued on Jan. 20, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for manufacturing gate of NAND flash" was invented by Pengkai Xu (Shanghai) and Fulong Qiao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for manufacturing a NAND flash, comprising: step 1, sequentially form a floating gate dielectric layer and a first polysilicon layer; step 2, sequentially forming an inter-gate dielectric layer and a second polysilicon layer, wherein a first doping concentration of the second polysilicon layer is less than a target doping concentration; step 3, forming a pattern ...