ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,018, issued on Jan. 13, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).
"Method for manufacturing metal zero layer" was invented by Haibo Lei (Shanghai), Guangcai Fu (Shanghai), Qi Shao (Shanghai) and Binbin Zha (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for manufacturing a metal zero layer, comprising: step 1, etching a zero interlayer film to form a first trench; step 2, performing first Ge ion implantation to form a first Ge layer in the zero interlayer film and achieve first amorphization; step 3, performing second Ge ion implantation to form a second Ge layer in the ze...