US Patent Issued to Shanghai Huali Integrated Circuit on Jan. 13 for "Metal gate structure of high-voltage device and method for making the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,456, issued on Jan. 13, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Metal gate structure of high-voltage device and method for making the same" was invented by Yu Xia (Shanghai) and Zhibin He (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a metal gate structure of a high-voltage device and a method for making the same, forming a dummy gate on the gate oxide layer, wherein the dummy gate is composed of a plurality of polysilicon structures spaced apart from each other; forming a protective layer on sidewalls of the plurality of polysilicon structures and on the gate oxide layer betwe...