US Patent Issued to Shanghai Huali Integrated Circuit on Dec. 30 for "Method for making elevated source-drain structure of PMOS in FDSOI process" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,971, issued on Dec. 30, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for making elevated source-drain structure of PMOS in FDSOI process" was invented by Yongyue Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "This application discloses a method for making an elevated source-drain structure of a PMOS in an FDSOI process, including: Step 1, forming a gate structure of a PMOS on an FDSOI substrate; Step 2, forming an elevated source-drain structure, further including: Step 21, forming a seed layer; Step 22, forming a bulk layer, the bulk layer being a B-Ge-doped Si epitaxial layer. Step 23, forming a first ...