US Patent Issued to Shanghai Huali Integrated Circuit on Dec. 30 for "Method for improving bridging between source/drain epitaxial layer and gate" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,930, issued on Dec. 30, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for improving bridging between source/drain epitaxial layer and gate" was invented by Yong Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application relates to a method for improving the bridging defects between a source/drain epitaxial layer and a gate, and relates to a semiconductor integrated circuit technology. By adding a process of etching an insulating layer between lower portions of fins after an etching process of forming a polysilicon gate row, then forming sidewalls and a hard mask layer, and then forming a source/...