US Patent Issued to Shanghai Huali Integrated Circuit on Dec. 16 for "Method for manufacturing a metal gate by a gate replacement process including carbon Ion implantation of a zero interlayer dielectric" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,680, issued on Dec. 16, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for manufacturing a metal gate by a gate replacement process including carbon Ion implantation of a zero interlayer dielectric" was invented by Zhou Yao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for manufacturing a metal gate, comprising: step 1, providing a semiconductor substrate on which dummy polysilicon gates are formed, wherein a first gate dielectric layer is formed at the bottom of the dummy polysilicon gates, and a spacing region between the dummy polysilicon gates is filled with a zer...