US Patent Issued to Shanghai Huali Integrated Circuit on Dec. 16 for "HV device and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,648, issued on Dec. 16, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"HV device and method for manufacturing same" was invented by Zhi Tian (Shanghai), Hua Shao (Shanghai) and Haoyu Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses an HV device, comprising: a gate dielectric layer formed in a first trench and a second dielectric layer formed in a second trench. A second side face of a drain shallow trench isolation is aligned with a first side face of the first trench. A second side face of the second trench is aligned with a first side face of the drain shallow trench isolation. A...