US Patent Issued to Shanghai Huali Integrated Circuit on April 22 for "Method for manufacturing metal gate" (Chinese Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,824, issued on April 22, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Method for manufacturing metal gate" was invented by Yanxia Hao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method for manufacturing a metal gate, comprising: step 1: forming a polysilicon dummy gate on a semiconductor substrate; step 2: forming low dielectric constant sidewalls, comprising: step 21: forming a first protective layer; step 22: forming a second low dielectric constant layer; step 23: forming a third protective layer; and step 24: performing blank etching, and forming the low dielectric constant s...