US Patent Issued to SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING on Oct. 21 for "RFLDMOS device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,446, issued on Oct. 21, was assigned to SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Corp. (Shanghai).

"RFLDMOS device and manufacturing method thereof" was invented by Han Yu (Shanghai), Jinming Zhang (Shanghai) and Bing Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides an RFLDMOS device and a manufacturing method thereof, by an etching process of adding dielectric layers between the Faraday shielding covers, interconnection of the multiple layers of Faraday shielding covers is realized, solving the problem that a parasitic resistance of a Faraday shielding cover may easily cause a greater feedback ca...