ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,069, issued on May 20, was assigned to SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Corp. (Shanghai).
"IGBT device and method of making the same" was invented by Jia Pan (Shanghai), Tongbo Zhang (Shanghai), Yiping Yao (Shanghai), Jiye Yang (Shanghai), Junjun Xing (Shanghai), Chong Chen (Shanghai), Xuan Huang (Shanghai) and Peng Sun (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "An IGBT device and a method for manufacturing it, the device includes a super junction structure that has several N-type pillars and P-type pillars arranged alternately; a cell unit that is located in an N-type epitaxial layer, and the N-type epitaxial layer i...