US Patent Issued to SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING on Jan. 13 for "Semiconductor structure and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,053, issued on Jan. 13, was assigned to SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Corp. (Shanghai).

"Semiconductor structure and method of forming the same" was invented by Jia Pan (Shanghai), Peng Sun (Shanghai), Yiping Yao (Shanghai), Jiye Yang (Shanghai), Junjun Xing (Shanghai), Chong Chen (Shanghai), Xuan Huang (Shanghai) and Tongbo Zhang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a method of forming the same. The semiconductor structure includes: a substrate doped with a first ion, a deep trench structure disposed in the substrate, a barrier doped region dispos...