US Patent Issued to Shanghai Huahong Grace Semiconductor Manufacturing on Dec. 23 for "Shield gate trench MOSFET device and method for manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,435, issued on Dec. 23, was assigned to Shanghai Huahong Grace Semiconductor Manufacturing Corp. (Shanghai).

"Shield gate trench MOSFET device and method for manufacturing the same" was invented by Shufan Yan (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A shield gate trench MOSFET device includes a substrate and a trench in the substrate. A lower portion of the trench is filled with a shield gate dielectric layer and a first polysilicon layer. An upper portion of the trench is filled with a first dielectric layer, a second polysilicon layer, and a second dielectric layer. The second dielectric layer is located above the second polysilico...