US Patent Issued to Shanghai Huahong Grace Semiconductor Manufacturing on Dec. 16 for "Shielded gate MOSFET device and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,641, issued on Dec. 16, was assigned to Shanghai Huahong Grace Semiconductor Manufacturing Corp. (Shanghai).

"Shielded gate MOSFET device and manufacturing method thereof" was invented by Shufan Yan (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A shielded gate MOSFET device and a manufacturing method thereof is provided. In the method, the shielded gate thick dielectric layers are formed with the thick oxide layer process at the bottoms in the trenches, poly is deposited in each trench and is back etched to leave gate poly on the side wall of each trench, whereas the portion, right in the center of each trench, of the thin poly layer is r...