US Patent Issued to SHANGHAI BRIGHT POWER SEMICONDUCTOR on Oct. 14 for "Enhanced capacitor for integration with metal-oxide semiconductor field-effect transistor" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,298, issued on Oct. 14, was assigned to SHANGHAI BRIGHT POWER SEMICONDUCTOR Co. LTD. (Shanghai).

"Enhanced capacitor for integration with metal-oxide semiconductor field-effect transistor" was invented by Shuming Xu (Shanghai) and Jian Wu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor is provided for integration with a MOSFET device(s) formed on the same substrate. The capacitor comprises a first plate including a doped semiconductor layer of a first conductivity type, an insulating layer formed on an upper surface of the doped semiconductor layer, and a second plate including a polysilicon layer formed on an upper surface of t...