US Patent Issued to SHANGHAI BRIGHT POWER SEMICONDUCTOR on Dec. 16 for "Three-dimensional bipolar-CMOS-DMOS (BCD) structure with integrated back-side capacitor" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,711, issued on Dec. 16, was assigned to SHANGHAI BRIGHT POWER SEMICONDUCTOR Co. LTD. (Shanghai).

"Three-dimensional bipolar-CMOS-DMOS (BCD) structure with integrated back-side capacitor" was invented by Luyao Song (Shanghai), Hang Fan (Shanghai), Jian Wu (Shanghai), Lei Shi (Shanghai) and Shuming Xu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes at least a first chip, the first chip comprising a semiconductor substrate and an active layer formed on an upper surface of the substrate, one or more lateral metal-oxide semiconductor devices being formed in the active layer of the first chip. The semiconductor ...