ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,749, issued on Oct. 7, was assigned to SEOUL VIOSYS Co. LTD. (Ansan-si, South Korea).
"Light emitting diode" was invented by Se Hee Oh (Ansan-si, South Korea), Hyun A Kim (Ansan-si, South Korea), Jong Kyu Kim (Ansan-si, South Korea) and Hyoung Jin Lim (Ansan-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting diode includes a first conductivity type semiconductor layer, a mesa with an active layer and a second conductivity type semiconductor layer disposed thereon, a first contact layer comprising an outer contact portion contacting the first conductivity type semiconductor layer near an edge thereof and an inner contact p...