ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,679, issued on May 13, was assigned to SEOUL VIOSYS Co. LTD. (Ansan-si, South Korea).

"Light emitting diode" was invented by Jae Kwon Kim (Ansan-si, South Korea), Min Chan Heo (Ansan-si, South Korea), Kyoung Wan Kim (Ansan-si, South Korea), Jong Kyu Kim (Ansan-si, South Korea), Hyun A Kim (Ansan-si, South Korea) and Joon Sup Lee (Ansan-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation laye...