ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,034, issued on Dec. 30, was assigned to Seoul Viosys Co. Ltd. (Gyeonggi-do, South Korea).
"Light emitting diode and method of fabricating the same" was invented by Chae Hon Kim (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting diode and a method of fabricating the same are provided. The light emitting diode according to exemplary embodiments includes a lower n-type semiconductor layer, an active layer, a p-type semiconductor layer, a high-concentration n-type semiconductor layer, and an upper n-type semiconductor layer. The high concentration n-type semiconductor layer can have a higher n-type doping concentra...