US Patent Issued to Seoul National Unviersity R&DBFoundation on May 20 for "Neuromorphic memristor device based on vertically-oriented halide perovskite nanostructure and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,268, issued on May 20, was assigned to Seoul National Unviersity R&DBFoundation (Seoul, South Korea).

"Neuromorphic memristor device based on vertically-oriented halide perovskite nanostructure and method of manufacturing the same" was invented by Ho Won Jang (Seoul, South Korea) and Seung Ju Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a neuromorphic memristor device, which includes a resistive switching layer formed on a lower electrode; and an upper electrode formed on the resistive switching layer, in which the resistive switching layer includes an organic metal halide having a perovskite ...