US Patent Issued to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION on May 20 for "3D capacitor stack and method of fabricating the stack" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,022, issued on May 20, was assigned to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION (Seoul, South Korea).

"3D capacitor stack and method of fabricating the stack" was invented by Jong-Ho Lee (Seoul, South Korea), Young-Tak Seo (Seongnam-si, South Korea), Soochang Lee (Seoul, South Korea), Seongbin Oh (Seoul, South Korea) and Jangsaeng Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a 3D capacitor stack and a method for manufacturing the same. The 3D capacitor stack comprises: a drain line electrode having a pillar shape provided in a vertical direction on a substrate surface; a plurality of first insulating layers pos...