US Patent Issued to Seoul National University R&DB Foundation on Dec. 30 for "Random access memory and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,152, issued on Dec. 30, was assigned to Seoul National University R&DB Foundation (Seoul, South Korea).

"Random access memory and method of fabricating the same" was invented by Jae-Joon Kim (Seoul, South Korea) and Munhyeon Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A random access memory includes a first transistor including a first gate extending in a first direction, a second transistor disposed on a same plane as the first transistor and including a second gate extending in the first direction, a third transistor including a third gate extending in a second direction perpendicular to the first direction and formed on...