US Patent Issued to Sensor Electronic Technology on Jan. 27 for "Semiconductor heterostructure with band gap control for improved light emission" (New York, Virginia Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,611, issued on Jan. 27, was assigned to Sensor Electronic Technology Inc. (Columbia, S.C.).

"Semiconductor heterostructure with band gap control for improved light emission" was invented by Maxim S. Shatalov (Mt. Sinai, N.Y.) and Alexander Dobrinsky (Vienna, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semicon...