US Patent Issued to SENIC on June 10 for "Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer" (South Korean Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,325,933, issued on June 10, was assigned to SENIC INC. (Chungcheongnam-do, South Korea).

"Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer" was invented by Jong Hwi Park (Gyeonggi-do, South Korea), Kap Ryeol Ku (Gyeonggi-do, South Korea), Jung Gyu Kim (Gyeonggi-do, South Korea), Jung Woo Choi (Gyeonggi-do, South Korea), Jung Doo Seo (Gyeonggi-do, South Korea) and Myung Ok Kyun (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a silicon carbide powder, a method of manufacturing a silicon carbide powder, and a silicon carbide wafer. More particularly, the ...