ALEXANDRIA, Va., April 9 -- United States Patent no. 12,270,122, issued on April 8, was assigned to SENIC Inc. (Cheonan-si, South Korea).
"Silicon carbide wafer and semiconductor device" was invented by Jung Woo Choi (Cheonan-si, South Korea), Myung Ok Kyun (Cheonan-si, South Korea), Jong Hwi Park (Cheonan-si, South Korea), Jung Doo Seo (Cheonan-si, South Korea), Jung-Gyu Kim (Cheonan-si, South Korea) and Kap-Ryeol Ku (Cheonan-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide wafer has one surface and the other surface opposite to the one surface. An average Rmax roughness of the one surface is 2.0 nm or less, and an average Ra roughness of the one surface is 0.1 nm or less. An...