US Patent Issued to Semiconductor Technology Innovation Center (Beijing) on May 6 for "Method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,164, issued on May 6, was assigned to Semiconductor Technology Innovation Center (Beijing) Corp. (Beijing).

"Method for forming semiconductor structure" was invented by Ren Ye (Beijing), Bu Weihai (Beijing) and Wu Yongqin (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. The method includes: providing a base; forming a channel structure on the base, where the channel structure includes one or more stacked channel decks, each of the one or more stacked channel decks including a sacrificial layer and a channel layer located on the sacrificial layer, the sacrificial layer including two f...