US Patent Issued to Semiconductor Manufacturing International (Shanghai) on Aug. 12 for "Magnetic random access memory cell and memory" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,773, issued on Aug. 12, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai).

"Magnetic random access memory cell and memory" was invented by Jisong Jin (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a magnetic random access memory cell and a magnetic random access memory. One form of a memory cell includes: a spin-orbit torque (SOT) layer, through which a write current flows when performing a write operation on the magnetic random access memory cell, a direction of the write current being a first direction, and a direction parallel to the SOT layer and perpendicular to the first direction bein...